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Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes |  Nanoscale Research Letters | Full Text
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes | Nanoscale Research Letters | Full Text

Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si

GaN FAQs | GaN Systems
GaN FAQs | GaN Systems

Different Isolation Processes for Free-Standing GaN p-n Power Diode with  Ultra-High Current Injection
Different Isolation Processes for Free-Standing GaN p-n Power Diode with Ultra-High Current Injection

Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances  (RSC Publishing)
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N  Schottky Diodes | HTML
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML

Figure 2 from 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by  Molecular Beam Epitaxy | Semantic Scholar
Figure 2 from 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy | Semantic Scholar

Obliterating dynamic on-resistance degradation - News
Obliterating dynamic on-resistance degradation - News

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N  Schottky Diodes | HTML
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML

Increasing GaN Schottky diode breakdown voltage with recessed double-field  plate anode
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode

Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech  Opinion - Charged EVs
Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech Opinion - Charged EVs

GaN two-terminal devices, High-breakdown Schottky diodes - III-nitride  semiconductors and their modern devices
GaN two-terminal devices, High-breakdown Schottky diodes - III-nitride semiconductors and their modern devices

Hydrogen sensors using nitride-based semiconductor diodes: the role of  metal/semiconductor interfaces. - Abstract - Europe PMC
Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces. - Abstract - Europe PMC

Panasonic claims 7.6kA/cm² for a GaN diode
Panasonic claims 7.6kA/cm² for a GaN diode

Improving Ni/GaN Schottky diode performance through interfacial passivation  layer formed via ultraviolet/ozone treatment - ScienceDirect
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect

Improved performance in vertical GaN Schottky diode assisted by AlGaN  tunneling barrier: Applied Physics Letters: Vol 108, No 11
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11

Electrical properties and carrier transport mechanism in V/p-GaN Schottky  diode at high temperature range - ScienceDirect
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect

GaN-Based Schottky Diode | IntechOpen
GaN-Based Schottky Diode | IntechOpen

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure  of high electron mobility transistors | Scientific Reports
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports

Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si

Chinese team develops Kilovolt GaN diode - News
Chinese team develops Kilovolt GaN diode - News

PTC Website
PTC Website

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN  metal-insulator-semiconductor (MIS) Schottky diodes: AIP Advances: Vol 5,  No 9
Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes: AIP Advances: Vol 5, No 9

a), (b) Two vertical structures of Schottky diode fabricated on GaN... |  Download Scientific Diagram
a), (b) Two vertical structures of Schottky diode fabricated on GaN... | Download Scientific Diagram

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode  (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. -  Abstract - Europe PMC
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. - Abstract - Europe PMC