Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech Opinion - Charged EVs
GaN two-terminal devices, High-breakdown Schottky diodes - III-nitride semiconductors and their modern devices
Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces. - Abstract - Europe PMC
Panasonic claims 7.6kA/cm² for a GaN diode
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
GaN-Based Schottky Diode | IntechOpen
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Chinese team develops Kilovolt GaN diode - News
PTC Website
Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes: AIP Advances: Vol 5, No 9
a), (b) Two vertical structures of Schottky diode fabricated on GaN... | Download Scientific Diagram
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. - Abstract - Europe PMC